ComHeat Microwave AB is a design company that develops silicon power devices using foundry services. Presently we are working on a new patented LDMOS concept. We also have a fundamentally Latch-Free LIGBT/IGBT new patented device concept.
The concept has been implemented on SOI at a foundry.
With key performance advantages (200V-device):
IDsat more than 10x higher than conventional LDMOS, (2.5 A/mm vs. 0.2 A/mm).
Latch-free implies drastic improved SOA
Presentation of the new 60-1000V LDMOS device.
Article in Elektronik i Norden in Swedish.
Article in Solid-State Electronics, "A new latch-free LIGBT on SOI with very high current density and low drive voltage", J Olsson et. al., Solid State Electronics 115 (2016) pages 179-184..
ComHeat and Uppsala University presents the device at the EUROSOI-ULIS conference in Bologna.
ComHeat presents new device concept at Swedish Microwave Days in Gothenburg.
Artikel i Elektronik i Norden på svenska från konferensen.
For more information contact Klas-Håkan Eklund.
Short presentation of key personnel.