Company

ComHeat Microwave AB is a design company that develops silicon power devices using foundry services. Presently we are working on a new patented LDMOS concept. We also have a fundamentally Latch-Free LIGBT/IGBT new patented device concept.

Technology overview

LDMOS

• A new MOS power device based on bulk Si with breakthrough performance. From 60V up to more than 1000V.
• Patented concept.
• Performance is about the same as for GaN and SiC based devices and much better than present state-of-the-art Si bulk devices
  
• Status: to be implemented on Si.
• The implementation of the new power device will be based on standard available equipment and processes used in semiconductor industry.

• More information here or contact us.

LIGBT SOI

• A fundamentally latch-free LIGBTconcept has been developed and patented.

• The concept has been implemented on SOI at a foundry.

• With key performance advantages (200V-device):

  • IDsat more than 10x higher than conventional LDMOS, (2.5 A/mm vs. 0.2 A/mm).
    

  • IDsat more than 3-4x higher than present LIGBT devices on SOI (0.7 A/mm).

• Latch-free implies drastic improved SOA

• Falltime is about 50 ns.
• Status: the device is transferred to a foundry.

• More information here or contact us.

LIGBT Bulk-Si

• A fast fundamentally latch-free LIGBT implemented on bulk-Si and isolated from the substrate.
• Patented concept
• Falltime is below 2.5 ns (40V-device).
• IDsat is around 2.5 A/mm, will challenge conventional LDMOS solutions below 40V.
• Area for a 40V-device in BCD technology is 0.015mm2.
  
• Status: to be implemented in BCD technology.

• More information here or contact us.