ComHeat Microwave AB is a design company that develops silicon power devices using foundry services. Presently we are working on a fundamentally Latch-Free LIGBT/IGBT new patented device concept.
This new device concept which earlier has been proven in laboratory is now being implemented in a standard foundry process by ComHeat Microwave AB. It is a 0.18 um SOI technology compatible with Low Voltage CMOS and Bipolar analog devices where High Voltage devices with breakdown voltage up to around 230V can be implemented.
Some early results were presented at the EUROSOI-ULIS conference in 2015. An extended paper was later published in Solid State Electronics “A new latch-free LIGBT on SOI with very high current density and low drive voltage”.
During last year additional improvements have been made. Von,when the device starts to conduct has been reduced from 2V down to 0.8 V increasing overall current capability. This has reduced RonxA (FOM,Figure of merit) down to 120mΩmm2, improving the company position to more than 5 times less area than competitive LIGBT approaches.
For the same on-resistance and current the new device can be implemented in less than 1/5 of the area. In the new device the MOS device will take up 1/2 of the area and the PNP transistor the other half. The output capacitance is determined by the PNP device and is then reduced to less than 1/10. The maximum saturation current is nearly 7 times higher than competitive LIGBTs. This is very important for the fall time which is inversely proportional to IDsat. Compared to LDMOS devices the saturation current is 15-30 times higher.
Additional competitive advantages:
Article in Solid-State Electronics, "A new latch-free LIGBT on SOI with very high current density and low drive voltage", J Olsson et. al., Solid State Electronics 115 (2016) pages 179-184..
ComHeat and Uppsala University presents the device at the EUROSOI-ULIS conference in Bologna.
ComHeat presents new device concept at Swedish Microwave Days in Gothenburg.
Artikel i Elektronik i Norden på svenska från konferensen.
For more information contact Klas-Håkan Eklund.
Short presentation of key personnel.